LOW-TEMPERATURE DEPOSITION OF HEXAGONAL FERRITE FILMS BY SPUTTERING

Citation
A. Morisako et al., LOW-TEMPERATURE DEPOSITION OF HEXAGONAL FERRITE FILMS BY SPUTTERING, Journal of applied physics, 75(10), 1994, pp. 5969-5971
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
75
Issue
10
Year of publication
1994
Part
2A
Pages
5969 - 5971
Database
ISI
SICI code
0021-8979(1994)75:10<5969:LDOHFF>2.0.ZU;2-6
Abstract
Pb-substituted Ba-ferrite films were prepared at various substrate tem perature T(s) by dc magnetron sputtering and their crystallographic ch aracteristics and magnetic properties were investigated. The substitut ion of Pb facilitates the crystallization and improves the crystallini ty for hexagonal M phase. All of the films prepared at T(s) above 460- degrees-C exhibit a good c-axis orientation and the c-axis dispersion angle (DELTAtheta50) for Pb-substituted Ba-ferrite films is as small a s 1-degrees. The coercivities (H(c perpendicular-to)) and H(c parallel -to)) and saturation magnetization M(s) of Pb-substituted Ba-ferrite f ilms are 0.7-1.0 kOe, 0.2 kOe and 250-300 emu/cm3, respectively.