In most of the cases, a local wall energy decrease, usually associated
with defects, leads to domain wall pinning. Another mechanism for coe
rcivity is to create local maxima in the anisotropy energy. It is obse
rved that in epitaxial garnet crystals, locally enhanced anisotropy du
e to stress arising from iridium inclusions embedded in the substrate
is the source of coercivity. By modifying our previous energy barrier
model, the coercivity has been calculated as a function of the size an
d position of the iridium inclusions in the substrate. It is shown tha
t the coercivity varies nonlinearly with inclusion size and depth in t
he substrate material, in agreement with experimental observation.