RESONANT RAMAN-SCATTERING FROM MOBILE ELECTRONS IN THE FRACTIONAL QUANTUM HALL REGIME

Authors
PLATZMAN PM HE S
Citation
Pm. Platzman et S. He, RESONANT RAMAN-SCATTERING FROM MOBILE ELECTRONS IN THE FRACTIONAL QUANTUM HALL REGIME, Physical review. B, Condensed matter, 49(19), 1994, pp. 13674-13679
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
49
Issue
19
Year of publication
1994
Pages
13674 - 13679
Database
ISI
SICI code
0163-1829(1994)49:19<13674:RRFMEI>2.0.ZU;2-C
Abstract
We show that the resonant Raman cross section for the scattering of li ght from two-dimensional electrons in GaAs quantum wells in the fracti onal quantum Hall regime, to a good approximation, has a piece proport ional to the projected structure factor and another piece coming from hole shakeup proportional to a specific higher-order structure factor. Exact numerical results for up to ten particles at all momentum trans fers are presented and discussed.