DETERMINATION OF THE ELECTRON-DENSITY IN GAAS ALXGA1-XAS HETEROSTRUCTURES

An optimized self-consistent method for determination of the quantal e lectron density is presented. It is applied, in the zero-temperature c ase, to devices with either partial or full donor ionization. A Thomas -Fermi approximation for the T = 0 limit is developed and shown to be appropriate for systematic studies of the two-dimensional electron den sity, sigma-. A suitable linear approximation is found that provides s imple and accurate analytic expressions for sigma- in terms of the phy sical parameters of the device.