EFFECT OF VALENCE-BAND ANISOTROPY AND NONPARABOLICITY ON TOTAL SCATTERING RATES FOR HOLES IN NONPOLAR SEMICONDUCTORS

We investigate theoretically the effect of the warped and nonparabolic valence-band structure on the total scattering rates for holes in cub ic semiconductors with diamond lattices using the multiband effective- mass theory. All numerical calculations are done for silicon and inclu de ionized-impurity scattering, optical-, and acoustical-phonon scatte ring. We find that the anisotropy and nonparabolicity of the valence b ands result in a considerable dependence of the total scattering rates on the incident direction of the hole wave vector.