Ph. Dai et al., CRITICAL-BEHAVIOR OF THE HALL-COEFFICIENT OF SIP AT THE METAL-INSULATOR-TRANSITION, Physical review. B, Condensed matter, 49(19), 1994, pp. 14039-14042
Measurements down to 0.06 K indicate that the Hall coefficient of Si:P
diverges as the metal-insulator transition is approached, in contrast
with an earlier report by Koon and Castner for Si:As, and in disagree
ment with their claim for Si:P. We show that zero-temperature extrapol
ations deduced from data above 0.5 K, the range used in the earlier ex
periments, can yield a Hall coefficient that appears to remain finite.