MICROSTRUCTURAL ORIGIN OF GIANT MAGNETORESISTANCE IN A NEW SENSOR STRUCTURE-BASED ON NIFE AG DISCONTINUOUS MULTILAYER THIN-FILMS/

Citation
Ma. Parker et al., MICROSTRUCTURAL ORIGIN OF GIANT MAGNETORESISTANCE IN A NEW SENSOR STRUCTURE-BASED ON NIFE AG DISCONTINUOUS MULTILAYER THIN-FILMS/, Journal of applied physics, 75(10), 1994, pp. 6382-6384
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
75
Issue
10
Year of publication
1994
Part
2B
Pages
6382 - 6384
Database
ISI
SICI code
0021-8979(1994)75:10<6382:MOOGMI>2.0.ZU;2-0
Abstract
The origin of giant magnetoresistance (GMR) in a new sensor structure incorporating discontinuous multilayers (DML) of NiFe thin films separ ated by Ag interlayers is elucidated by means of x-ray diffraction, x- ray reflectivity, and cross-section transmission electron microscopy. It is shown that the observed magnetoresistance, approximately 4%-6% i n fields on the order of 5-10 Oe at 25-degrees-C, is associated with t he breakup upon annealing of the initially dense, columnar superlattic e structure into discontinuous multilayers of NiFe due to highly mobil e Ag forming Ag bridges between the Ag layers. This observation suppor ts a micromagnetic model for these structures that is based on the con cept of initially large ferromagnetic domains in the as-deposited NiFe structure, exhibiting negligible GMR, breaking up into discontinuous layers, exhibiting an appreciable GMR, with antiferromagnetic ordering across the Ag interlayers.