THE EFFECTS OF FILM GEOMETRY ON THE PROPERTIES OF FETAN FILMS

Authors
GAN Q BARNARD JA
Citation
Q. Gan et Ja. Barnard, THE EFFECTS OF FILM GEOMETRY ON THE PROPERTIES OF FETAN FILMS, Journal of applied physics, 75(10), 1994, pp. 6934-6936
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
10
Year of publication
1994
Part
2B
Pages
6934 - 6936
Database
ISI
SICI code
0021-8979(1994)75:10<6934:TEOFGO>2.0.ZU;2-L
Abstract
FeTaN single layer and FeTaN/SiO2 multilayer films were grown by high rate reactive dc magnetron sputtering. The film geometry (FeTaN layer thickness, SiO2 spacer thickness, and number of bilayer units) depende nce of the structure, magnetic properties and high-frequency permeabil ity characteristics were investigated.