MODIFICATION OF THE ABSORPTION-EDGE DUE TO GRAIN-BOUNDARIES AND MECHANICAL STRESSES IN POLYCRYSTALLINE SEMICONDUCTOR-FILMS

Citation
Ab. Maity et al., MODIFICATION OF THE ABSORPTION-EDGE DUE TO GRAIN-BOUNDARIES AND MECHANICAL STRESSES IN POLYCRYSTALLINE SEMICONDUCTOR-FILMS, Physica status solidi. b, Basic research, 183(1), 1994, pp. 185-191
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
183
Issue
1
Year of publication
1994
Pages
185 - 191
Database
ISI
SICI code
0370-1972(1994)183:1<185:MOTADT>2.0.ZU;2-H
Abstract
Explicit expressions for the absorption coefficient beyond the absorpt ion edge arc obtained by considering the Franz-Keldysh effect and mech anical stress to be operative simultaneously in the grain boundary reg ions of polycrystalline semiconductor films. The expressions are succe ssfully utilized to explain the tail end of the absorption spectrum of ZnTe films.