DUAL ARSENIC AND BORON ION-IMPLANTATION IN SILICON

Authors
YOKOTA K OKAMOTO Y MIYASHITA F HIRAO T WATANABE M SEKINE K ANDO Y MATSUDA K
Citation
K. Yokota et al., DUAL ARSENIC AND BORON ION-IMPLANTATION IN SILICON, Journal of applied physics, 75(11), 1994, pp. 7247-7251
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
11
Year of publication
1994
Pages
7247 - 7251
Database
ISI
SICI code
0021-8979(1994)75:11<7247:DAABII>2.0.ZU;2-C
Abstract
Arsenic (As) and boron (B) ions were implanted into silicon (Si) at en ergies such that their projected ranges coincided. The implanted Si wa s annealed in argon gas at a temperature of 950-degrees-C for 30 or 30 0 min. The activation efficiency of the implanted As atoms decreased w ith an increase in the implant dose of the B ions, and the diffusivity of the As atoms decreased. On the other hand, the diffusivity of the B atoms decreased with an increase in annealing time.