SYNCHROTRON-RADIATION-INDUCED REACTIONS OF TETRAETHOXYSILANE ON SI STUDIED BY PHOTOEMISSION SPECTROSCOPY

Authors
NIWANO M SIMONS JK FRIGO SP ROSENBERG RA
Citation
M. Niwano et al., SYNCHROTRON-RADIATION-INDUCED REACTIONS OF TETRAETHOXYSILANE ON SI STUDIED BY PHOTOEMISSION SPECTROSCOPY, Journal of applied physics, 75(11), 1994, pp. 7304-7309
Citations number
32
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
11
Year of publication
1994
Pages
7304 - 7309
Database
ISI
SICI code
0021-8979(1994)75:11<7304:SROTOS>2.0.ZU;2-4
Abstract
The synchrotron-radiation (SR)-induced chemical reactions of tetraetho xysilane Si(OC2H5)4 (TEOS) adsorbed on Si has been studied using photo emission spectroscopy. It is demonstrated that TEOS adsorbs intact on the Si surface below room temperature. SR in the vacuum ultraviolet re gion decomposes the TEOS molecules adsorbed on Si to form a silicon-ox ide-like film on the Si surface, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and wat er adsorbed on Si at 85 K indicate that the presence of water reduces the carbon contamination.