EVIDENCE OF BISTABLE SHALLOW-DEEP SILICON DONORS IN GAAS-ALAS SUPERLATTICES

Authors
SELLITTO P SICART J ROBERT JL
Citation
P. Sellitto et al., EVIDENCE OF BISTABLE SHALLOW-DEEP SILICON DONORS IN GAAS-ALAS SUPERLATTICES, Journal of applied physics, 75(11), 1994, pp. 7356-7360
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
11
Year of publication
1994
Pages
7356 - 7360
Database
ISI
SICI code
0021-8979(1994)75:11<7356:EOBSSD>2.0.ZU;2-U
Abstract
We have investigated the electrical properties of silicon-doped superl attices under hydrostatic pressure. Hall data are interpreted with a c onduction model involving a nonmetastable shallow donor besides the me tastable DX states lying in GaAs and AlAs layers. A change from a GAMM A miniband conduction into a X miniband conduction is induced by incre asing pressure, showing that the shallow donor is linked with the X mi nimum of the superlattice miniband.