P. Sellitto et al., EVIDENCE OF BISTABLE SHALLOW-DEEP SILICON DONORS IN GAAS-ALAS SUPERLATTICES, Journal of applied physics, 75(11), 1994, pp. 7356-7360
We have investigated the electrical properties of silicon-doped superl
attices under hydrostatic pressure. Hall data are interpreted with a c
onduction model involving a nonmetastable shallow donor besides the me
tastable DX states lying in GaAs and AlAs layers. A change from a GAMM
A miniband conduction into a X miniband conduction is induced by incre
asing pressure, showing that the shallow donor is linked with the X mi
nimum of the superlattice miniband.