ELECTRONIC AND SHALLOW DONOR IMPURITY STATES IN GAAS-GA1-XALXAS QUANTUM-WELL WIRES - EFFECTS OF DIELECTRIC MISMATCH

The effects of image potential due to dielectric mismatch on electroni c and shallow donor impurity states in quasi-one-dimensional GaAs-Ga1- xAlxAs quantum-well wires with rectangular cross section for both fini te barrier and infinitely high barrier are investigated. The results h ave shown that, when the image potential is included, the variations i n electronic energy level and impurity binding energy are considerable , especially when the cross-section dimensions of the quantum wire bec ome small. The results also showed that the effects of the impurity io n image potential on impurity binding energy are much larger than thos e of electron image potential.