SURFACE PREPARATION EFFECTS FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE LAYERS ON INGAP LAYERS

The effect of InGaP surface preparation has been investigated for the molecular bearn epitaxial (MBE) growth of ZnSe. The net acceptor conce ntration profile near the interface of nitrogen-doped p-type ZnSe laye rs was strongly affected by the surface preparation of InGaP layers. T he low net acceptor concentration region for the samples grown on a th ermally treated (580-degrees-C) or P2S5-treated InGaP surface was narr ower than that region for the sample grown on a surface exposed to nei ther thermal treatment nor P2S5 treatment. Structures with InGaP buffe r layers exposed to the surface treatments outlined here hold much pro mise for the reduction of the blue-green laser operation voltage.