MODULATION VOLTAGE OF HIGH T(C) DC SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE WITH DAMPING RESISTANCE

The effect of damping resistance on the voltage versus flux (V-PHI) re lation of the high T(c) dc superconducting quantum interference device (SQUID) is studied experimentally. Dc SQUID using YBaCuO step-edge ju nction and damping resistance in parallel with SQUID inductance is fab ricated. Measured values of modulation voltage in the V-PHI relation a re compared with those of the conventional SQUID without damping resis tance. It is shown that modulation voltage is much improved by using d amping resistance. The obtained experimental results agree reasonably with theoretical predictions reported previously.