PREPARATION OF CUGASE2 HETEROEPITAXIAL LAYERS BY METALORGANIC MOLECULAR-BEAM EPITAXY

Authors
SHIRAKATA S MORITA K ISOMURA S
Citation
S. Shirakata et al., PREPARATION OF CUGASE2 HETEROEPITAXIAL LAYERS BY METALORGANIC MOLECULAR-BEAM EPITAXY, JPN J A P 2, 33(5B), 1994, pp. 120000739-120000742
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
5B
Year of publication
1994
Pages
120000739 - 120000742
Database
ISI
SICI code
Abstract
The growth of CuGaSe2 films on a GaAs(100) substrate using cyclopentad ienylcoppertriethylphosphine (CpCuTEP) as a Cu source in metalorganic molecular beam epitaxy (MOMBE) has been studied. Epitaxial CuGaSe2 fil ms have been grown at 500-degrees-C with the c-axis normal to the subs trate plane. Films were characterized by scanning electron microscopy, X-ray diffraction, photoluminescence and photoreflectance techniques.