MICROSTRUCTURAL EVOLUTION OF DIAMOND GROWTH ON IRON SILICIDE SILICON SUBSTRATES BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

During hot filament chemical vapor deposition (HFCVD), the presence of iron silicide on the surface of silicon substrates was found to enhan ce diamond nucleation density. Specimens were prepared by laser ablati ng iron onto the substrate, followed by isothermal annealing at 700-de grees-C. A high resolution transmission electron microscope showed tha t an amorphous diamond-like carbon (DLC) layer about 8-10 nm thick for med on the iron silicide phase during HFCVD. The DLC layer locally rec rystallized which created a nucleation site for the subsequent growth of diamond. DLC will be a precursor layer for diamond growth.