J. Singh et M. Vellaikal, MICROSTRUCTURAL EVOLUTION OF DIAMOND GROWTH ON IRON SILICIDE SILICON SUBSTRATES BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Surface & coatings technology, 64(3), 1994, pp. 131-137
During hot filament chemical vapor deposition (HFCVD), the presence of
iron silicide on the surface of silicon substrates was found to enhan
ce diamond nucleation density. Specimens were prepared by laser ablati
ng iron onto the substrate, followed by isothermal annealing at 700-de
grees-C. A high resolution transmission electron microscope showed tha
t an amorphous diamond-like carbon (DLC) layer about 8-10 nm thick for
med on the iron silicide phase during HFCVD. The DLC layer locally rec
rystallized which created a nucleation site for the subsequent growth
of diamond. DLC will be a precursor layer for diamond growth.