NOVEL PHOTORESISTS INCORPORATING [(TRIMETHYLSILYL)OXY]STYRENE

We have synthesized and characterized polymers of [(trimethylsilyl)oxy ]styrene, [(tert-butoxycarbonyl)oxy]styrene, and/or -sulfone. These po lymers have been shown to be effective matrix resins for deep-UV photo resists when formulated with photoacid generators (PAGs). The incorpor ation of silicon into the polymers gives increased thermal stability a nd reduced weight loss after postexposure bake as compared to resists formulated with poly([tert-butoxycarbonyl)oxy]styrene sulfone) (PTBSS) . The weight loss upon postexposure bake has been reduced from 35% for PTBSS to values as low as 17% for the silicon-containing polymers. Pr eliminary lithographic testing indicates that these polymers exhibit g ood sensitivity and contrast.