HIGH-QUALITY GAN-INGAN HETEROSTRUCTURES GROWN ON (111)SILICON SUBSTRATES

We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructu res on (111) GaAs/Si composite substrates. The structural, optical, an d electrical properties of the epitaxial layers are evaluated using x- ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measureme nts demonstrate high quality of GaN grown on the composite substrate. (C) 1996 American Institute of Physics.