300 PS 4-K READ-ONLY MEMORY IMPLEMENTED WITH ALGAAS GAAS HBT TECHNOLOGY/

Authors
KWOK CY SHENG NH ASBECK PM
Citation
Cy. Kwok et al., 300 PS 4-K READ-ONLY MEMORY IMPLEMENTED WITH ALGAAS GAAS HBT TECHNOLOGY/, Electronics Letters, 30(10), 1994, pp. 759-760
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
10
Year of publication
1994
Pages
759 - 760
Database
ISI
SICI code
0013-5194(1994)30:10<759:3P4RMI>2.0.ZU;2-7
Abstract
A low-power mask-programmable 4 Kbit read-only memory with 300ps acces s time is reported. The circuit is implemented in AlGaAs/GaAs HBT tech nology based on 1.4mum emitter width. Power dissipation for the circui t is less than 1.2W, which has been minimised through the use of capac itively-coupled active pull-down circuitry.