NIMN-PINNED SPIN VALVES WITH HIGH PINNING FIELD MADE BY ION-BEAM SPUTTERING

Spin valves of film layer structure, Ta/NiMn/NiFe/Co/Cu/Co/NiFe/Ta/Sub strate were fabricated by ion beam sputtering. Optimization of the pro cesses of deposition and posthermal treatment yields highly (111) orie nted spin valve films with a giant-magnetoresistance ratio of above 4% and pinning field of 650 Oe. This is the strongest pinning field ever observed. It stays constant up to 180 degrees C, then decreases to ze ro at a blocking temperature of 380 degrees C. These spin valves are h ighly thermally stable and, thus, suitable for the application of high density recording heads. (C) 1996 American Institute of Physics.