10 WAVELENGTH MQW-DBR LASERS FABRICATED BY SELECTIVE MOVPE GROWTH

Authors
SASAKI T YAMAGUCHI M KITAMURA M
Citation
T. Sasaki et al., 10 WAVELENGTH MQW-DBR LASERS FABRICATED BY SELECTIVE MOVPE GROWTH, Electronics Letters, 30(10), 1994, pp. 785-786
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
10
Year of publication
1994
Pages
785 - 786
Database
ISI
SICI code
0013-5194(1994)30:10<785:1WMLFB>2.0.ZU;2-B
Abstract
Selective MOVPE growth is used to develop multiwavelength MQW-DBR lase rs. Selectively grown waveguide layer thicknesses in the DBR region ar e varied by controlling the mask stripe width, resulting in wavelength control in MQW-DBR laser arrays fabricated with a constant period gra ting. A wavelength span of over 20nm at a 2.5nm constant wavelength st ep is demonstrated for 10 consecutive lasers.