BASE ETCHED SELF-ALIGNED TRANSISTOR TECHNOLOGY FOR ADVANCED POLYEMITTER BIPOLAR-TRANSISTORS

The authors report the fabrication of double selfaligned advanced bipo lar transistors using base etched selfaligned transistor technology (B ESTT). The main feature of these transistors is that the base and emit ter contacts are self-aligned although using only a single poly layer. The fabrication and DC electrical measurements are discussed.