INSIGHT INTO CRITERIA FOR DESIGN OPTIMIZATION OF BISTABLE FIELD-EFFECT TRANSISTOR (BISFET)

Citation
Jj. Ojha et al., INSIGHT INTO CRITERIA FOR DESIGN OPTIMIZATION OF BISTABLE FIELD-EFFECT TRANSISTOR (BISFET), Electronics Letters, 30(10), 1994, pp. 822-823
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
30
Issue
10
Year of publication
1994
Pages
822 - 823
Database
ISI
SICI code
0013-5194(1994)30:10<822:IICFDO>2.0.ZU;2-A
Abstract
The operation of the novel n-channel GaAs/AlGaAs bistable field effect transistor (BISFET) with a separate collector terminal is reported fo r the first time. The hysteresis in the previously-reported source-loo p transitions is found to increase from 0.5V to 1V with a negative col lector bias, and the switching ratio increases from 1.5 to nearly 2. T his suggests important criteria for design optimisation which dramatic ally enhance the potential of the BISFET for practical applications.