INSIGHT INTO CRITERIA FOR DESIGN OPTIMIZATION OF BISTABLE FIELD-EFFECT TRANSISTOR (BISFET)

The operation of the novel n-channel GaAs/AlGaAs bistable field effect transistor (BISFET) with a separate collector terminal is reported fo r the first time. The hysteresis in the previously-reported source-loo p transitions is found to increase from 0.5V to 1V with a negative col lector bias, and the switching ratio increases from 1.5 to nearly 2. T his suggests important criteria for design optimisation which dramatic ally enhance the potential of the BISFET for practical applications.