Jj. Ojha et al., INSIGHT INTO CRITERIA FOR DESIGN OPTIMIZATION OF BISTABLE FIELD-EFFECT TRANSISTOR (BISFET), Electronics Letters, 30(10), 1994, pp. 822-823
The operation of the novel n-channel GaAs/AlGaAs bistable field effect
transistor (BISFET) with a separate collector terminal is reported fo
r the first time. The hysteresis in the previously-reported source-loo
p transitions is found to increase from 0.5V to 1V with a negative col
lector bias, and the switching ratio increases from 1.5 to nearly 2. T
his suggests important criteria for design optimisation which dramatic
ally enhance the potential of the BISFET for practical applications.