PIEZOELECTRIC FIELD-EFFECT TRANSISTOR (PEFET) USING IN0.2GA0.8AS AL0.35GA0.65AS/IN0.2GA0.8AS/GAAS STRAINED-LAYER STRUCTURE ON (111)B GAAS SUBSTRATE/

Authors
LU SS HUANG CL
Citation
Ss. Lu et Cl. Huang, PIEZOELECTRIC FIELD-EFFECT TRANSISTOR (PEFET) USING IN0.2GA0.8AS AL0.35GA0.65AS/IN0.2GA0.8AS/GAAS STRAINED-LAYER STRUCTURE ON (111)B GAAS SUBSTRATE/, Electronics Letters, 30(10), 1994, pp. 823-825
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
10
Year of publication
1994
Pages
823 - 825
Database
ISI
SICI code
0013-5194(1994)30:10<823:PFT(UI>2.0.ZU;2-6
Abstract
A novel electronic device using a two dimensional electron gas produce d by the strain-induced electric field in a [111] growth-axis In0.2Ga0 .8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure without modulation doping is reported. Two dimensional electron gas densities greater than 10(11)cm-2 were observed both at room temperaure and 77- degrees-K. A field effect transistor using this strain-layer structure was fabricated successfully.