SIZE DISTRIBUTION AND MAGNETIC-BEHAVIOR OF LEAD INCLUSIONS IN SILICONSINGLE-CRYSTALS

The size distribution of Pb inclusions formed by high-dose ion implant ation in crystalline Si has been studied with a variety of experimenta l techniques. Results obtained from small angle x-ray scattering, tran smission electron microscopy, and low-temperature magnetic moment meas urements are compared. For samples implanted at room temperature, the results depend on which technique has been used, due to the amorphizat ion of the silicon. The experiments on the samples implanted at an ele vated temperature yield compatible results. (C) 1997 American Institut e of Physics.