INTRINSIC CARRIER CONCENTRATION AND ELECTRON EFFECTIVE-MASS IN HG1-XZNXTE

Citation
Yg. Sha et al., INTRINSIC CARRIER CONCENTRATION AND ELECTRON EFFECTIVE-MASS IN HG1-XZNXTE, Journal of applied physics, 81(5), 1997, pp. 2245-2249
Citations number
30
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
81
Issue
5
Year of publication
1997
Pages
2245 - 2249
Database
ISI
SICI code
0021-8979(1997)81:5<2245:ICCAEE>2.0.ZU;2-Y
Abstract
The intrinsic carrier concentrations, Fermi energies, and the electron effective masses are calculated for Hg1-xZnxTe with 0<x less than or equal to 0.4 and 50 K less than or equal to T less than or equal to 40 0 K. The numerical calculations are based on the Kane k . p model and no further analytical simplification or approximation is made for the energy band structure beyond those inherent in the Kane model. The res ults are compared to the previous calculations. (C) 1997 American Inst itute of Physics.