A FULL-BAND MONTE-CARLO MODEL FOR HOLE TRANSPORT IN SILICON

Hole transport in bulk silicon is explored using an efficient and accu rate Monte Carlo (MC) tool based on the local pseudopotential band str ucture. Acoustic and optical phonon scattering, ionized impurity scatt ering, and impact ionization are the dominant scattering mechanisms th at have been included. in the interest of computational efficiency, mo mentum relaxation times have been used to describe ionized impurity sc attering and self-scattering rates have been computed in a dynamic fas hion. The temperature and doping dependence of low-field hole mobility is obtained and good agreement with experimental data has been observ ed. MC extracted impact ionization coefficients are also shown to agre e well with published experimental data. Momentum and energy relaxatio n times are obtained as a function of the average hole energy for use in moment based hydrodynamic simulators. The MC model is suitable for studying both low-field and high-field hole transport in silicon. (C) 1997 American Institute of Physics.