P. Jonsson et al., THE AMBIPOLAR AUGER COEFFICIENT - MEASURED TEMPERATURE-DEPENDENCE IN ELECTRON-IRRADIATED AND HIGHLY INJECTED N-TYPE SILICON, Journal of applied physics, 81(5), 1997, pp. 2256-2262
From foe-carrier absorption measurements of spatially and temporally r
esolved excess carrier concentrations in the n-base of electron irradi
ated, low doped, highly injected p-i-n type diodes, the effective ambi
polar lifetime has been extracted with respect to different injection
levels and temperatures. By measuring lifetimes up to injection levels
of 3 x 10(17) cm(-3), the ambipolar Auger coefficient C-a and its tem
perature dependence has been determined in the range of 300-420 K. In
accordance with recent publications, the room temperature value of the
Auger coefficient was found to be about three times higher than one o
f the most commonly used values. Further on, the ambipolar Auger coeff
icient is empirically estimated to vary with temperature as C-a(T)=1.1
x10(-30)(T/300)(1.8), were T is the absolute temperature. Also the amb
ipolar diffusion coefficient has been investigated and compared with d
ifferent models. The results are important and useful in simulation of
high-injected silicon devices, i.e., solar cells and power devices. (
C) 1997 American Institute of Physics.