SINGLE-CRYSTAL PB(ZRXTI1-X)O-3 THIN-FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION - SYSTEMATIC COMPOSITIONAL VARIATION OF ELECTRONIC AND OPTICAL-PROPERTIES

Citation
Cm. Foster et al., SINGLE-CRYSTAL PB(ZRXTI1-X)O-3 THIN-FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION - SYSTEMATIC COMPOSITIONAL VARIATION OF ELECTRONIC AND OPTICAL-PROPERTIES, Journal of applied physics, 81(5), 1997, pp. 2349-2357
Citations number
58
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
81
Issue
5
Year of publication
1997
Pages
2349 - 2357
Database
ISI
SICI code
0021-8979(1997)81:5<2349:SPTPBM>2.0.ZU;2-8
Abstract
Single-crystal thin films of Pb(ZrxTi1-x)O-3 (PZT) covering the full c ompositional range (0 less than or equal to x less than or equal to 1) were deposited by metal-organic chemical vapor deposition. Epitaxial SrRuO3(001) thin films grown on SrTiO3(001) substrates by rf-magnetron sputter deposition served as template electrode layers to promote the epitaxial growth of PZT. X-ray diffraction, energy-dispersive x-ray s pectroscopy, atomic force microscopy, transmission electron microscopy , and optical waveguiding were used to characterize the crystalline st ructure, composition, surface morphology, microstructure, refractive i ndex, and film thickness of the deposited films. The PZT films were si ngle crystalline for all compositions exhibiting cube-on-cube growth e pitaxy with the substrate and showed very high degrees of crystallinit y and orientation. The films exhibited typical root mean square surfac e roughness of similar to 1.0-2.5 nm. For tetragonal films, the surfac e morphology was dominated by grain tilting resulting from ferroelectr ic domain formation. We report the systematic compositional variation of the optical, dielectric, polarization, and electronic transport pro perties of these single-crystalline PZT thin films. We show that the s olid-solution phase diagram of the PZT system for thin films differs f rom the bulk due to epitaxy-induced strains and interfacial defect for mation. High values of remanant polarization (30-55 mu C/cm(2)) were o bserved for ferroelectric compositions in the range of 0.8 less than o r equal to x less than or equal to 0.2. Unlike previous studies, the d ielectric constant exhibited a clear dependence on composition with va lues ranging from 225 to 650. The coercive fields decreased with incre asing Zr concentration to a minimum of 20 kV/cm for x=0.8. The undoped films exhibited both high resistivity and dielectric-breakdown streng th (10(13)-10(14) Omega cm at 100 kV/cm and 300-700 kV/cm, respectivel y). (C) 1997 American Institute of Physics.