TRACE-ANALYTICAL METHODS FOR MONITORING CONTAMINATIONS IN SEMICONDUCTOR-GRADE SI MANUFACTURING

Citation
L. Fabry et al., TRACE-ANALYTICAL METHODS FOR MONITORING CONTAMINATIONS IN SEMICONDUCTOR-GRADE SI MANUFACTURING, Fresenius' journal of analytical chemistry, 349(4), 1994, pp. 260-271
Citations number
83
Categorie Soggetti
Chemistry Analytical
ISSN journal
09370633
Volume
349
Issue
4
Year of publication
1994
Pages
260 - 271
Database
ISI
SICI code
0937-0633(1994)349:4<260:TMFMCI>2.0.ZU;2-C
Abstract
Generating systematic data on incoming materials, processes, productio n environments and products by contamination monitoring and analyis is the key element of quality assurance in semiconductor fabrication. To be able to match the analytical capabilities to the requirements of i mproving materials and processes, the level of sophistication of conta mination monitoring and analysis systems must be higher than the expec ted demands in the fabrication line. The accuracy of each analytical m ethod has to be cross-checked by different independent techniques. Acc uracy, precision, power of detection, analysis time and expenses shoul d always be tailored to the particular case. All monitoring methods mu st run under statistical process control. The methods described meet t he analytical requirements of the near future in semiconductor grade s ilicon manufacturing.