PHOTOELECTRIC PROPERTIES OF COLLOIDAL SEMICONDUCTOR-FILMS

Citation
R. Konenkamp et al., PHOTOELECTRIC PROPERTIES OF COLLOIDAL SEMICONDUCTOR-FILMS, Thin solid films, 246(1-2), 1994, pp. 13-16
Citations number
12
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
246
Issue
1-2
Year of publication
1994
Pages
13 - 16
Database
ISI
SICI code
0040-6090(1994)246:1-2<13:PPOCS>2.0.ZU;2-U
Abstract
We report results on photocarrier transport in colloidal TiO2 films wi th the aim of elucidating the fundamental features of the transport ki netics. We find the transport process in these films to be dispersive. Typical tripping lifetimes are of the order of microseconds and mobil ity lifetime products several 10(-11) Cm2 V-1. The transport propertie s are markedly improved when deep trap states are saturated by excess carriers. We show that trapping lifetimes can be altered over several orders of magnitude. Recombination is studied in Schottky barrier type samples under double injection conditions. We find the recombination lifetime to decrease when the injection level is raised, indicative of bimolecular kinetics. Typical recombination times are in the range 10 mus to 1 ms. It is concluded from this study that specific operation conditions can result in transport properties greatly different from t hose near equilibrium. Recent success in using these films in photovol taic applications may be due to the improved transport properties unde r high carrier injection.