NANODISPERSED CRXSI1-X THIN-FILMS - TRANSPORT-PROPERTIES AND THERMOELECTRIC APPLICATION

The electrical resistivity and thermopower of heterogeneous CrxSi1-x t hin films have been investigated in terms of their dependence on the d egree of crystallization arising from a post-deposition annealing trea tment. The films were prepared by physical vapour deposition within th e silicon rich region 0.2 < x < 0.3. At high annealing temperatures th e films investigated were found to be two-component systems consisting of CrSi2 and Si crystallites. The transport behaviour is discussed on the basis of the X-ray structural analysis results. The thermoelectri c efficiency of the deposited films can be influenced by the heat trea tment conditions. Using a combination of annealed binary CrSi and tern ary CrSiN thin films it is possible to prepare thermocouples for appli cation at elevated temperatures.