PREPARATION OF SI-TISI2 SCHOTTKY DIODES BY RAPID THERMAL ANNEALING

Schottky diodes of Si-TiSi2 type have been prepared by annealing of sp uttered Ti films on p-Si in a rapid thermal processing system. The the rmal treatments were carried out in a nitrogen atmosphere at different temperatures and times. The aim of this work is the study of the stag es of the silicide growth as well as the thermal stability of the diod es. Rutherford backscattering spectra were measured to analyse the inf luence of the thermal treatments on the elemental depth distribution i n the diode structures. The ideality factor and the diode barrier heig ht were determined from electrical measurements. The diodes show an id eality factor very close to unity. The barrier height phi(B) was calcu lated from both I-V and C-V curves, resulting in fairly close values. The values of phi(B) decrease from 0.55 eV for the as-deposited sample s to a stable value of 0.51 eV for the diodes treated in the 635-1090- degrees-C temperature range for 20 s. Even after annealing at the high est temperatures, the diodes show an excellent rectifying behaviour.