SMALL-SIGNAL MODULATION AND TEMPERATURE-DEPENDENCE OF THE TUNNELING INJECTION-LASER

Authors
DAVIS L SUN HC YOON H BHATTACHARYA PK
Citation
L. Davis et al., SMALL-SIGNAL MODULATION AND TEMPERATURE-DEPENDENCE OF THE TUNNELING INJECTION-LASER, Applied physics letters, 64(24), 1994, pp. 3222-3224
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
24
Year of publication
1994
Pages
3222 - 3224
Database
ISI
SICI code
0003-6951(1994)64:24<3222:SMATOT>2.0.ZU;2-C
Abstract
Recently, we demonstrated a novel laser structure, called the tunnelin g injection laser, where the electrons are injected into the active la sing quantum well region via tunneling. High performance results for t his device have now been demonstrated. A T(o) of 160 K was found from temperature-dependent measurements (25-70-degrees-C), High differentia l gain (5.5 X 10(-16) cm2) and modulation bandwidth (12.5 GHz) have be en attained relative t) other single quantum well lasers.