ELECTRON-DISTRIBUTION IN A PERIODICALLY LINE-DOPED GAAS

The electrostatic potential and the electron distribution in periodica lly wirelike Si-doped GaAs are calculated within the semiclassical app roximation for a distance between the wires of D = 8-16 nm. It is show n that the mutual coupling between channels is significant for these w ire separations. The electron distribution is most homogenized when th e average electron density is n(s) approximately 5 X 10(15) m-2, nearl y independent of D. The existence of one-dimensional bound states is f ound to be unlikely even for n(s) approximately 8 X 10(16) m-2 when D = 8 nm, indicating that the electron distribution modulation is sustai ned by two-dimensional states.