FAR-INFRARED STUDY OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON PATTERNED GAAS

A quasi-one-dimensional electron gas has been realized by using molecu lar beam epitaxy to grow a high electron mobility transistor (HEMT) on a patterned GaAs structure consisting of alternate layers of p-GaAs a nd n-GaAs. Independently contacting the p-GaAs and n-GaAs creates a pa tterned backgate, which is used to electrostatically induce a lateral modulation of the electron gas in the HEMT. Far-infrared cyclotron res onance spectra demonstrate that lateral confinement energies over the range 1.3-3.3 meV may be selected via tuning of the biases applied to the p-GaAs and n-GaAs layers.