GROWTH OF GAAS ALAS TRENCH-BURIED MULTIPLE-QUANTUM WIRES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON V-GROOVED SUBSTRATES/

We report the fabrication of GaAs/AlAs multiple trench-buried quantum wires (TBWs) by metalorganic chemical vapor deposition on V-grooved su bstrates. The shape of AlAs layers grown on the V-grooves can be chang ed significantly from a V-shape to U-shape by varying growth temperatu res and group-V/III ratios. 30-nm-wide and 100-nm-deep AlAs trenches w ith nearly vertical sidewalls are formed at the growth temperature of 650-degrees-C with the group-V/III ratio of 165, while V-shaped AlAs g rooves are formed at 700-degrees-C with the V/III ratio of 110. Vertic ally stacked double TBWs are formed using the 30-nm-wide trenches. The low-temperature (15 K) photoluminescence spectrum for the double TBWs shows two distinct emission peaks corresponding to the 6.5- and 8.0-n m-thick wires.