LOW-TEMPERATURE FORMATION OF SI(111)7X7 SURFACES FROM CHEMICALLY PREPARED H SI(111)-(1 X-1) SURFACES/

Authors
VINH LT EDDRIEF M SEBENNE CA DUMAS P TALEBIBRAHIMI A GUNTHER R CHABAL YJ DERRIEN J
Citation
Lt. Vinh et al., LOW-TEMPERATURE FORMATION OF SI(111)7X7 SURFACES FROM CHEMICALLY PREPARED H SI(111)-(1 X-1) SURFACES/, Applied physics letters, 64(24), 1994, pp. 3308-3310
Citations number
27
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
24
Year of publication
1994
Pages
3308 - 3310
Database
ISI
SICI code
0003-6951(1994)64:24<3308:LFOSSF>2.0.ZU;2-T
Abstract
Reflection high energy and low energy electron diffraction, along with high resolution photoemission studies reveal that ideally H-terminate d Si(111) surfaces, H/Si(111)-(1 X 1) prepared by wet chemical etching , transform in ultrahigh vacuum into atomically clean Si(111)7 X 7 sur faces upon hydrogen desorption at temperatures as low as 550-degrees-C .