PHOTOREFLECTANCE STUDY OF SURFACE FERMI-LEVEL IN MOLECULAR-BEAM EPITAXIAL GROWN INALAS HETEROSTRUCTURES

Authors
HWANG JS TYAN SL CHOU WY LEE ML WEYBURNE D HANG Z LIN HH LEE TL
Citation
Js. Hwang et al., PHOTOREFLECTANCE STUDY OF SURFACE FERMI-LEVEL IN MOLECULAR-BEAM EPITAXIAL GROWN INALAS HETEROSTRUCTURES, Applied physics letters, 64(24), 1994, pp. 3314-3316
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
24
Year of publication
1994
Pages
3314 - 3316
Database
ISI
SICI code
0003-6951(1994)64:24<3314:PSOSFI>2.0.ZU;2-S
Abstract
We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temper ature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50 +/- 0.01 to 0.81 +/- 0.01 eV below the conduction band edge.