SIC SILICON-ON-INSULATOR STRUCTURES BY DIRECT CARBONIZATION CONVERSION AND POSTGROWTH FROM SILACYCLOBUTANE

SiC on insulating substrates has been achieved by the propane carboniz ation of the Si device layer of (100) Si SOI structures. Subsequent gr owth with silacyclobutane has resulted in SiC films of 0.5 to 1 mum. T he SiC films were very smooth and featureless, and the SiC/SiO2 interf ace was void-free. FTIR absorption measurements of the SiC SOI structu re exhibited peaks at approximately 800 and approximately 1100 cm-1 in dicating the presence of only Si-C and Si-O(x) bonding. The FWHM of th e Si-C IR line is 25 cm-1. X-ray diffraction measurements exhibit only the SiC (200) peak, confirming the 3C-SiC polytype. Auger depth profi ling of the SiC SOI structure indicates an SiC film of uniform composi tion, and complete conversion of the original.