LIFETIME STUDY OF METASTABLE SURFACE RECOMBINATION CENTERS IN N-TYPE SILICON-WAFERS

Authors
DAIO H BUCZKOWSKI A SHIMURA F
Citation
H. Daio et al., LIFETIME STUDY OF METASTABLE SURFACE RECOMBINATION CENTERS IN N-TYPE SILICON-WAFERS, Journal of the Electrochemical Society, 141(6), 1994, pp. 1590-1593
Citations number
16
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
141
Issue
6
Year of publication
1994
Pages
1590 - 1593
Database
ISI
SICI code
0013-4651(1994)141:6<1590:LSOMSR>2.0.ZU;2-8
Abstract
Temperature dependence of minority-carrier recombination lifetime in n -type Czochralski silicon wafers revealed the presence of metastable r ecombination centers located near the wafer surface. It is found that they are affected by the crystal pulling rate and the chemical surface treatment. The grown-in defects which strongly depend on the pulling rate, can contribute to the metastable surface centers.