H. Daio et al., LIFETIME STUDY OF METASTABLE SURFACE RECOMBINATION CENTERS IN N-TYPE SILICON-WAFERS, Journal of the Electrochemical Society, 141(6), 1994, pp. 1590-1593
Temperature dependence of minority-carrier recombination lifetime in n
-type Czochralski silicon wafers revealed the presence of metastable r
ecombination centers located near the wafer surface. It is found that
they are affected by the crystal pulling rate and the chemical surface
treatment. The grown-in defects which strongly depend on the pulling
rate, can contribute to the metastable surface centers.