NUMERICAL-CALCULATIONS OF THE ELECTRICAL EFFECTS INDUCED BY STRUCTURAL IMPERFECTIONS ON MOS CAPACITORS

As the thickness of gate quality SiO2 is reduced, minor structural int erface imperfections begin to play an important role in device perform ance and yield. To isolate the effects of a variety of such interface imperfections on electric field distribution within the SiO2 layer of biased metal oxide semiconductor capacitors, numerical calculations we re carried out. The results indicate that strong electric field distor tions may be expected for almost any interfacial defect configuration, being highest for metal precipitates. Technological consequences of t he findings are also discussed.