EFFECT OF INTERSTITIAL IMPURITIES ON POSTRONIUM FORMED IN VOIDS OF VANADIUM

Authors
HASEGAWA M SAITOH Y YAMAGUCHI S TAKAHASHI H OHNUKI S
Citation
M. Hasegawa et al., EFFECT OF INTERSTITIAL IMPURITIES ON POSTRONIUM FORMED IN VOIDS OF VANADIUM, Hyperfine interactions, 84(1-4), 1994, pp. 389-396
Citations number
13
Categorie Soggetti
Physics, Atomic, Molecular & Chemical","Physics, Nuclear","Physics, Condensed Matter
Journal title
Hyperfine interactions → ACNP
ISSN journal
03043843
Volume
84
Issue
1-4
Year of publication
1994
Pages
389 - 396
Database
ISI
SICI code
0304-3843(1994)84:1-4<389:EOIIOP>2.0.ZU;2-A
Abstract
Angular correlation of two-photon annihilation radiation (ACAR) measur ements have been performed to study the effect of interstitial impurit ies (O, C and D) n positronium (Ps) formation in irradiation-induced v oids of vanadium. It has been observed that Ps formation is sensitivel y affected by doping with the interstitial impurities, irradiation dos e, irradiation temperature, and also by post-irradiation annealing. Th e Ps component intensity is found to be related to segregation of the interstitial impurities and provides a new experimental method to stud y void surfaces.