STEADY-STATE NYQUIST THEOREM FOR MULTITERMINAL NONDEGENERATE SEMICONDUCTOR-DEVICES

Formulas for the spectral intensities of the short-circuit thermal noi se currents in arbitrarily shaped multi-terminal semiconductor devices under dc bias are derived by solving the Langevin-type Boltzmann tran sport equations. The derived formulas are valid when the carrier distr ibutions are not far from the local equilibrium distributions. Measure ment data on short-circuit thermal noise currents are obtained for a t hree-terminal silicon bulk device. A comparison between the calculated and experimental results is made and thereby the validity of our theo ry is confirmed.