NOISE AND IMPEDANCE OF N-N-N+ INP MICROWAVE GENERATORS()

The noise power spectral density P(n) in a submicron InP diode loaded by resistor R is calculated using the Monte Carlo particle technique. It is shown that at biases above the generation threshold the P(n) has a peak at the frequency f(peak) which corresponds to the highest gene ration frequency at the given R. The excess noise is the shot noise of electrons accumulated into the layers. Measuring the frequency of the peak f(peak) as the function of R one can obtain the negative values of the real part of impedance at the high-frequency side of the negati ve impedance spectrum.