A CONTROLLABLE MECHANISM OF FORMING EXTREMELY LOW-RESISTANCE NONALLOYED OHMIC CONTACTS TO GROUP-III-V COMPOUND SEMICONDUCTORS (VOL 74, PG 7344, 1993)

Authors
STAREEV G KUNZEL H DORTMANN G
Citation
G. Stareev et al., A CONTROLLABLE MECHANISM OF FORMING EXTREMELY LOW-RESISTANCE NONALLOYED OHMIC CONTACTS TO GROUP-III-V COMPOUND SEMICONDUCTORS (VOL 74, PG 7344, 1993), Journal of applied physics, 75(12), 1994, pp. 8246-8246
Citations number
1
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
12
Year of publication
1994
Pages
8246 - 8246
Database
ISI
SICI code
0021-8979(1994)75:12<8246:ACMOFE>2.0.ZU;2-5