LOW-TEMPERATURE IMPURITY BREAKDOWN IN THE SEMIMAGNETIC SEMICONDUCTOR P-HG1-XMNXTE

Authors
BELYAEV AE KOMIRENKO SM SEMENOV YG SHEVCHENKO NV
Citation
Ae. Belyaev et al., LOW-TEMPERATURE IMPURITY BREAKDOWN IN THE SEMIMAGNETIC SEMICONDUCTOR P-HG1-XMNXTE, Semiconductor science and technology, 9(6), 1994, pp. 1176-1182
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
6
Year of publication
1994
Pages
1176 - 1182
Database
ISI
SICI code
0268-1242(1994)9:6<1176:LIBITS>2.0.ZU;2-Z
Abstract
An S-shaped voltage-current characteristic (vcc) has been observed in the semimagnetic semiconductor p-MnxHg1-xTe with a sufficiently strong compensation. It is suggested that the amplification of fluctuations of the energy of shallow impurity centres which stem from fluctuations of the composition of the semiconducting solid solution (as in the ca se of p-MnxHg1-xTe which is considered in this paper) improves the con ditions for formation of an S-shaped vcc due to development of a non-e quilibrium carrier distribution in an impurity band during impact ioni zation.