MAGNETOPHOTOLUMINESCENCE EXCITATION SPECTROSCOPY IN A CENTER SI DELTA-DOPED GAAS AL0.33GA0.67AS DOUBLE-HETEROSTRUCTURE/

Authors
WAGNER J CALLEJA JM MESTRES N RICHARDS D FISCHER A PLOOG K
Citation
J. Wagner et al., MAGNETOPHOTOLUMINESCENCE EXCITATION SPECTROSCOPY IN A CENTER SI DELTA-DOPED GAAS AL0.33GA0.67AS DOUBLE-HETEROSTRUCTURE/, Semiconductor science and technology, 9(6), 1994, pp. 1204-1208
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
6
Year of publication
1994
Pages
1204 - 1208
Database
ISI
SICI code
0268-1242(1994)9:6<1204:MESIAC>2.0.ZU;2-7
Abstract
A centre Si delta-doped GaAs/Al0.33Ga0.67As double heterostructure has been studied by photoluminescence excitation spectroscopy in perpendi cular magnetic fields up to 13.5 T. Landau level transitions are ident ified to originate from the highest occupied electron subband. With in creasing field a depopulation of that electron subband is observed. Th e value of the field at which this depopulation occurs depends on the position of the Fermi level, which can be varied in the present sample structure by changing the intensity of the optical excitation.