THE BISTABILITY EFFECT IN RESONANT-TUNNELING PHOTOTRANSISTORS WITH MULTIPLE-QUANTUM-WELL STRUCTURE

Authors
RYZHII V
Citation
V. Ryzhii, THE BISTABILITY EFFECT IN RESONANT-TUNNELING PHOTOTRANSISTORS WITH MULTIPLE-QUANTUM-WELL STRUCTURE, Semiconductor science and technology, 9(6), 1994, pp. 1209-1214
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
6
Year of publication
1994
Pages
1209 - 1214
Database
ISI
SICI code
0268-1242(1994)9:6<1209:TBEIRP>2.0.ZU;2-#
Abstract
Bistable operation of resonant-tunnelling phototransistors incorporati ng a multiple quantum well base (RTQWPT) is reported. The mechanism of operation is resonant-tunnelling hot-electron injection controlled by electron photoemission from the multiple quantum well base into the c ollector. The RTQWPT utilizes intersubband optical absorption in the i nfrared region of the spectrum. The RTQWPT can be used as a high-effic iency optoelectronic switch controlled by infrared radiation and an in frared photodetector.